High Surface Activity Low Loose Packing Density Hexagonal Crystal Structure White Aluminium Nitride Aln Powder with Good Electrical Insulation Properties

• Application: Structure Ceramic, Industrial Ceramic
• Type: Powder
• Material: Powder
• Transport Package: 50kg/Drum, 10drums/Pallet
• Trademark: Suoyi
• Origin: China
• Model NO.: SY-ALN-04
• HS Code: 2850001900
• Production Capacity: 2000tons/Month

Product Description

Detailed Photos

Product Parameters

Aluminum Nitride, AIN Ceramic Properties

Aluminum Nitride, formula AlN, is a newer material in the technical ceramics family. While its discovery occurred over 100 years ago, it has been developed into a commercially viable product with controlled and reproducible properties within the last 20 years.

.Key Aluminum Nitride Properties
	Good dielectric properties
	High thermal conductivity
	Low thermal expansion coefficient, close to that of Silicon
	Non-reactive with normal semiconductor process chemicals and gases
. Typical Aluminum Nitride Uses
	Substrates for electronic packages
	Heat sinks
	IC packages
	Power transistor bases
	Microwave device packages
	Material processing kiln furniture
	Semiconductor processing chamber fixtures and insulators
	Molten metal handling components

General Aluminum Nitride Information

Aluminum nitride has a hexagonal crystal structure and is a covalent bonded material. The use of sintering aids and hot pressing is required to produce a dense technical grade material. The material is stable to very high temperatures in inert atmospheres. In air, surface oxidation begins above 700°C. A layer of aluminum oxide forms which protects the material up to 1370°C. Above this temperature bulk oxidation occurs. Aluminum nitride is stable in hydrogen and carbon dioxide atmospheres up to 980°C. The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalis through attack on the aluminum nitride grains. The material hydrolyzes slowly in water. Most current applications are in the electronics area where heat removal is important. This material is of interest as a non-toxic alternative to beryllia. Metallization methods are available to allow AlN to be used in place of alumina and BeO for many electronic applications.

Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required; making it an ideal material for use in thermal management and electrical applications. Additionally, AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined. Aluminum Nitride has a coefficient of thermal expansion and electrical insulation properties that closely matches that of Silicon wafer material, making it an useful material for electronics applications where high temperatures and heat dissipation is often a problem.

 

1. AlN is susceptible to surface oxidization. When this happens, a layer of Aluminum Oxide forms. This does help to protect the material, however, it impacts the thermal conductivity (Alumina is ~30 W/m.K). In oxidizing atmospheres, this happens around 700°C. In inert atmospheres this layer protects the AlN up to ~1350°C. Bulk oxidation will occur at temperatures above this.

2. Coefficient of Thermal Expansion (CTE) describes how the size of an object changes with a change in temperature.

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